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Fusion-io [1] Acquired by SanDisk then Western Digital: United States Captive Yes Yes Yes Greenliant Systems [2] United States Independent No Yes Yes Hyperstone [3] Germany Independent No Yes Yes Indilinx [4] Acquired by Toshiba then Kioxia: South Korea: Captive Yes Yes No Intel [5] United States Captive Yes Yes No IntelliProp [6] United States ...
Slim and small (20 mm × 25 mm × 1.78 mm) but slower read/write, no wear-leveling controller, up to 2 GB [8] Type H 2005 2 GB Slim and small (20 mm × 25 mm × 1.78 mm) and swifter, no wear-leveling controller, up to 2 GB [8] XQD card: Sony & Nikon Standard 2011–2012 >2 TB High-capacity, high-speed standard using PCIe as interface
SanDisk co-founder Eli Harari developed the Floating Gate EEPROM which proved the practicality, reliability and endurance of semiconductor-based data storage. [5] In 1991, SanDisk produced the first flash-based solid-state drive (SSD) in a 2.5-inch hard disk drive form factor for IBM with a 20 MB capacity priced at about $1,000. [6]
Formerly through Flash Forward, [5] a joint venture owned by Kioxia and Fusion-IO's parent, SanDisk Formerly No Formerly G.Skill [6] Taiwan No No Yes No No Gigabyte Technology: Taiwan No No Yes i-RAM No Greenliant Systems [7] United States No No Yes No Yes GS Nanotech [8] [9] Russia: No No Yes No No Hewlett-Packard: United States No No Yes No ...
Unveiled in 1997 by SanDisk and Siemens, [1] MMC is based on a surface-contact low-pin-count serial interface using a single memory stack substrate assembly, and is therefore much smaller than earlier systems based on high-pin-count parallel interfaces using traditional surface-mount assembly such as CompactFlash.
This is the root cause of flash wear-out (see Flash memory#Memory wear), which is specified as the chip's “endurance.” In order to reduce the occurrence of such short circuits, floating gate flash is manufactured using a thick tunnel oxide (~100Å), but this slows erase when Fowler-Nordheim tunneling is used and forces the design to use a ...
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