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Qualcomm claims Quick Charge 3.0 is up to 4–6 °C cooler, 16% faster and 38% more efficient than Quick Charge 2.0, and that Quick Charge 3.0 with Dual Charge+ is up to 7–8 °C cooler, 27% faster and 45% more efficient than Quick Charge 2.0 with Dual Charge. [4] Quick Charge 4 was announced in December 2016 for the Snapdragon 835 and later ...
Acer Iconia Smart, Allegro, Fujitsu F-12C, HTC Desire HD, Desire S, Incredible S, Inspire 4G, One V, Radar, Huawei Ideos X5 (U8800 pro), U9000 Ideos X6, Vision, LG Optimus Ultimate (L96G), Eclypse, [9] Optimus Sol E730, Motorola Pro+, Pantech Vega X, Samsung Exhibit II 4G, Sharp Aquos Phone 003SH/005SH, Aquos Phone f (SH-13C), Aquos Phone the ...
In November 2016, a new range of phones were announced: Swift 2, Swift 2 Plus and Swift 2 X. The devices use Qualcomm SoCs again, specifically the MSM8937 octa-core clocked at 1.4 GHz, paired with an Adreno 505 GPU. All third-generation phones support Qualcomm's Quick Charge 3.0 standard, although no charger is included in the box. [21]
A shunt charge controller or shunt regulator diverts excess electricity to an auxiliary or "shunt" load, such as an electric water heater, when batteries are full. [7] Simple charge controllers stop charging a battery when they exceed a set high voltage level, and re-enable charging when battery voltage drops back below that level.
For example, Qualcomm's Quick Charge 2.0 is able to deliver 18 W at a higher voltage, and VOOC delivers 20 W at the normal 5 V. [76] Some of these technologies, such as Quick Charge 4, eventually became compatible with USB PD again. [77]
Qualcomm Quick Charge 2.0; 28 nm HPm (From 28 nm HP) Up to 1 billion transistors [155] Die size: 118mm²; The Snapdragon 801 was announced on February 24, 2014. [156] [157] CPU features 4 cores up to 2.45 GHz Krait 400; DSP features H.265 HD/30fps software decoding; ISP features Throughput: 1.0 GP/sec (From 0.64 GP/sec on S800) [158]
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