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Non-volatile memory typically refers to storage in memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level depending on ...
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
An illustration of the write amplification phenomenon in flash-based storage devices. Over time, advancements in central processing unit (CPU) speed has driven innovation in secondary storage technology. [7] One such innovation, flash memory, is a non-volatile storage medium that can be electrically erased and reprogrammed.
This was the first form of non-volatile memory based on the injection and storage of charges in a floating-gate MOSFET, [5] which later became the basis for EPROM (erasable PROM), EEPROM (electrically erasable PROM) and flash memory technologies. [6] The charge-trapping concept was first presented by John Szedon and Ting L. Chu in 1967 ...
There are two main kinds of semiconductor memory: volatile and non-volatile. Examples of non-volatile memory are flash memory and ROM, PROM, EPROM, and EEPROM memory. Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for CPU cache.
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