Search results
Results from the WOW.Com Content Network
p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
For this reason there will be no (or minimal) electric current across the junction. At the middle of the junction of the p–n material, a depletion region is created to stand-off the reverse voltage. The width of the depletion region grows larger with higher voltage. The electric field grows as the reverse voltage increases.
From Top to Bottom; Top: hole and electron concentrations through the junction; Second: charge densities; Third: electric field; Bottom: electric potential Figure 3. A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the ...
These ions in the crystal lattice result in a charge disparity, creating a built in electric field. [2] In a biased p-n junction, the drift current is independent of the biasing, as the number of minority carriers is independent of the biasing voltages. But as minority charge carriers can be thermally generated, drift current is temperature ...
where D is the diffusion coefficient for the electron in the considered medium, n is the number of electrons per unit volume (i.e. number density), q is the magnitude of charge of an electron, μ is electron mobility in the medium, and E = −dΦ/dx (Φ potential difference) is the electric field as the potential gradient of the electric potential.
A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...
An electric field can increase the number of free electrons and holes in a semiconductor, thereby changing its conductivity. The field may be applied by a reverse-biased p–n junction, forming a junction field-effect transistor or by an electrode insulated from the bulk material by an oxide layer, forming a metal–oxide–semiconductor field ...
At the junction of two different types of the same semiconductor (e.g., p-n junction) the bands vary continuously since the dopants are sparsely distributed and only perturb the system. At the junction of two different semiconductors there is a sharp shift in band energies from one material to the other; the band alignment at the junction (e.g ...