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The metal-oxide-semiconductor FET (MOSFET, or MOS transistor), a solid-state device, is by far the most used widely semiconductor device today. It accounts for at least 99.9% of all transistors, and there have been an estimated 13 sextillion MOSFETs manufactured between 1960 and 2018.
In 1948, Bardeen patented an insulated-gate transistor (IGFET) with an inversion layer; Bardeen's concept forms the basis of MOSFET technology today. [34] An improved type of MOSFET technology, CMOS, was developed by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963. [35] [36] CMOS was commercialised by RCA in the late 1960s. [35]
The MOSFET is the most widely used type of transistor and the most critical device component in integrated circuit (IC) chips. [2] Planar process, developed by Jean Hoerni at Fairchild Semiconductor in early 1959, was critical to the invention of the monolithic integrated circuit chip by Robert Noyce later in 1959.
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Very-large-scale integration (VLSI) is the process of creating an integrated circuit (IC) by combining millions or billions of MOS transistors onto a single chip. VLSI began in the 1970s when MOS integrated circuit (metal oxide semiconductor) chips were developed and then widely adopted, enabling complex semiconductor and telecommunications technologies.
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3 3D model of TO-3 package. In electronics, TO-3 is a designation for a standardized metal semiconductor package used for power semiconductors, including transistors, silicon controlled rectifiers, and, integrated circuits.
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