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The 65 nm process is an advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm.
The reduction to 65 nm reduced the existing 230 mm 2 die based on the 90 nm process to half its current size, about 120 mm 2, greatly reducing IBM's manufacturing cost as well. On 12 March 2007, IBM announced that it started producing 65 nm Cells in its East Fishkill fab. The chips produced there are apparently only for IBMs own Cell blade ...
The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design. Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in ...
This smaller design, the Cell Broadband Engine or Cell/BE was fabricated using a 90 nm SOI process. [ 10 ] In March 2007, IBM announced that the 65 nm version of Cell/BE was in production at its plant (at the time, now GlobalFoundries') in East Fishkill, New York , [ 10 ] [ 11 ] with Bandai Namco Entertainment using the Cell/BE processor for ...
In CPU fabrications, a die shrink always involves an advance to a lithographic node as defined by ITRS (see list). For GPU and SoC manufacturing, the die shrink often involves shrinking the die on a node not defined by the ITRS, for instance, the 150 nm, 110 nm, 80 nm, 55 nm, 40 nm and more currently 8 nm nodes, sometimes referred to as "half-nodes".
Cell BE, 64-bit PPE-core, 2 way multithreading, VMX, 512 kB L2 cache, 8x SPE, 8x 256 kB Local Store memory, 3.2 GHz, follows the PowerPC 2.02 ISA; Cell BE 65 nm, same as above but manufactured on a 65 nm process; PowerXCell 8i, same as above but with enhanced double precision SPEs and support for DDR-RAM
reengineered P6-based microarchitecture used in Intel Core 2 and Xeon microprocessors, built on a 65 nm process, supporting x86-64 level SSE instruction and macro-op fusion and enhanced micro-op fusion with a wider front end and decoder, larger out-of-order core and renamed register, support loop stream detector and large shadow register file.
This technique is used in DRAM cells ... suitable for 20 nm and beyond. [65] ... [108] and is already an integral part of Samsung's 10 nm process. ...