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Gallium nitride (Ga N) is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure .
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
A solid-state silicon battery or silicon-anode all-solid-state battery is a type of rechargeable lithium-ion battery consisting of a solid electrolyte, solid cathode, and silicon-based solid anode. [1] [2] In solid-state silicon batteries, lithium ions travel through a solid electrolyte from a positive cathode to a negative silicon anode. While ...
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor.
SCC55 has been tested and validated by battery manufacturers Farasis and StoreDot, the latter of which found that SCC55 could be charged to 80% capacity in 10 minutes. [16] In May 2022, Porsche AG announced plans to produce lithium-silicon battery cells with Group14's technology in Germany in 2024 to help power their new electric vehicles. [17]
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
The nitride anion, N 3-ion, is very elusive but compounds of nitride are numerous, although rarely naturally occurring. Some nitrides have a found applications, [1] such as wear-resistant coatings (e.g., titanium nitride, TiN), hard ceramic materials (e.g., silicon nitride, Si 3 N 4), and semiconductors (e.g., gallium nitride, GaN).
Indium gallium nitride (InGaN) is a semiconductor material made of a mix of gallium nitride (GaN) and indium nitride (InN). It is a ternary group III–V direct bandgap semiconductor. Its bandgap can be tuned by varying the amount of indium in the alloy from 0.7 eV to 3.4 eV, thus making it an ideal material for solar cells. [ 35 ]