Search results
Results from the WOW.Com Content Network
Under certain conditions, some battery chemistries are at risk of thermal runaway, leading to cell rupture or combustion.As thermal runaway is determined not only by cell chemistry but also cell size, cell design and charge, only the worst-case values are reflected here.
Assorted SO-DIMM Modules A 200-pin PC2-5300 DDR2 SO-DIMM. A 204-pin PC3-10600 DDR3 SO-DIMM. A SO-DIMM slot on a computer motherboard. A SO-DIMM (pronounced "so-dimm" / ˈ s oʊ d ɪ m /, also spelled "SODIMM") or small outline DIMM, is a smaller alternative to a DIMM, being roughly half the physical size of a regular DIMM. The first SODIMMs had ...
Typically DIMM or SO-DIMM. Power consumption A test with DDR and DDR2 RAM in 2005 found that average power consumption appeared to be of the order of 1–3 W per 512 MB module; this increases with clock rate and when in use rather than idling. [ 14 ]
PC2-5300 DDR2 SO-DIMM (for notebooks) Comparison of memory modules for desktop PCs (DIMM) Comparison of memory modules for portable/mobile PCs (SO-DIMM) The key difference between DDR2 and DDR SDRAM is the increase in prefetch length. In DDR SDRAM, the prefetch length was two bits for every bit in a word; whereas it is four bits in DDR2 SDRAM.
A third bank group bit (BG2) was added, allowing up to eight bank groups (2 → 3). The maximum number of banks per bank group remains at four (2 → 2), The number of row address bits remains at 17, for a maximum of 128K rows (17 → 17). One more column address bit (C10) is added, allowing up to 8192 columns (1 KB pages) in ×4 chips (11 → 12).
UniDIMM is a SO-DIMM form factor available in two dimensions: 69.6 mm × 30 mm (2.74 by 1.18 inches) for the standard UniDIMM version (the same size as DDR4 SO-DIMMs [5]), and 69.6 mm × 20 mm (2.74 by 0.79 inches) for the low-profile version.
In the fields of digital electronics and computer hardware, multi-channel memory architecture is a technology that increases the data transfer rate between the DRAM memory and the memory controller by adding more channels of communication between them.
Compared to DDR2 memory, DDR3 memory uses less power. Some manufacturers further propose using "dual-gate" transistors to reduce leakage of current. [10]According to JEDEC, [11]: 111 1.575 volts should be considered the absolute maximum when memory stability is the foremost consideration, such as in servers or other mission-critical devices.