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If a diode–transistor logic gate drives a transistor inverter of similar construction, the transistor will have a similar base-collector capacitance that is amplified by the transistor gain, so that it will be too slow to pass the glitch. But when the diode is much slower, recovery will become a concern:
Diode–transistor logic (DTL) is a class of digital circuits that is the direct ancestor of transistor–transistor logic. It is called so because the logic gating functions AND and OR are performed by diode logic , while logical inversion (NOT) and amplification (providing signal restoration) is performed by a transistor (in contrast with ...
MELF: Metal electrode leadless face (usually for resistors and diodes) SOD: Small-outline diode. SOT: Small-outline transistor (also SOT-23, SOT-223, SOT-323). TO-XX: wide range of small pin count packages often used for discrete parts like transistors or diodes. TO-3: Panel-mount with leads; TO-5: Metal can package with radial leads
The Shockley ideal diode equation or the diode law (named after the bipolar junction transistor co-inventor William Bradford Shockley) models the exponential current–voltage (I–V) relationship of diodes in moderate forward or reverse bias. The article Shockley diode equation provides details.
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
The first transistor hi-fi system was developed by engineers at GE and demonstrated at the University of Philadelphia in 1955. [9] In terms of commercial production, The Fisher TR-1 was the first "all transistor" preamplifier, which became available mid-1956. [10] In 1961, a company named Transis-tronics released a solid-state amplifier, the ...
A diode-connected transistor is a method of creating a two-terminal rectifying device (a diode) out of a three-terminal transistor. A characteristic of diode-connected transistors is that they are always in the saturation region for metal–oxide–semiconductor field-effect transistors (MOSFETs) and junction-gate field-effect transistors ...
The intersections of the load line with the transistor characteristic curves represent the circuit-constrained values of I C and V CE at different base currents. [2] If the transistor could pass all the current available, with no voltage dropped across it, the collector current would be the supply voltage V CC over R L. This is the point where ...
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