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Centrifugal liquid-phase epitaxy is used commercially to make thin layers of silicon, germanium, and gallium arsenide. [17] [18] Centrifugally formed film growth is a process used to form thin layers of materials by using a centrifuge. The process has been used to create silicon for thin-film solar cells [19] [20] and far-infrared ...
This was for a device grown on a GaSb substrate by organometallic vapour phase epitaxy (OMVPE). Devices have been grown by molecular beam epitaxy (MBE) and liquid phase epitaxy (LPE). The internal quantum efficiencies (IQE) of these devices approach 90%, while devices grown by the other two techniques exceed 95%. [30]
[5] Liquid phase epitaxy (LPE) is another key method, especially for creating thin YIG films with excellent uniformity. Ideal for optical and microwave devices, LPE enables precise film growth on substrates. [6] However, its high equipment costs and complex procedures limit its use to applications where superior quality is essential. [7]
GaAsSb films have been grown by molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy (MOVPE) and liquid phase epitaxy (LPE) on gallium arsenide, gallium antimonide and indium phosphide substrates. It is often incorporated into layered heterostructures with other III-V compounds.
One of the most used single crystals is that of Silicon in the semiconductor industry. The four main production methods for semiconductor single crystals are from metallic solutions: liquid phase epitaxy (LPE), liquid phase electroepitaxy (LPEE), the traveling heater method (THM), and liquid phase diffusion (LPD). [13]
CdTe was developed as an alternative substrate in the '90s. It is not lattice-matched to HgCdTe, but is much cheaper, as it can be grown by epitaxy on silicon (Si) or germanium (Ge) substrates. Liquid phase epitaxy (LPE), in which a CdZnTe substrate is lowered and spinning on top of the surface of a slowly cooling liquid HgCdTe melt. This gives ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
In the early 1960s, liquid-phase epitaxy (LPE) was invented by Herbert Nelson of RCA Laboratories. By layering the highest-quality crystals of varying compositions, it enabled the demonstration of the highest-quality heterojunction semiconductor laser materials for many years. LPE was adopted by all the leading laboratories worldwide and was ...