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It is also worth noting that the temperature coefficient of a 4.7 V Zener diode is close to that of the emitter-base junction of a silicon transistor at around −2 mV/°C, so in a simple regulating circuit where the 4.7 V diode sets the voltage at the base of an NPN transistor (i.e. their coefficients are acting in parallel), the emitter will ...
Most diodes therefore have a negative temperature coefficient, typically −2 mV/°C for silicon diodes. The temperature coefficient is approximately constant for temperatures above about 20 kelvin. Some graphs are given for 1N400x series, [52] and CY7 cryogenic temperature sensor. [53]
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
In electronics, the Zener effect (employed most notably in the appropriately named Zener diode) is a type of electrical breakdown, discovered by Clarence Melvin Zener. It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor , leading to numerous ...
The voltage across a diode operated at constant current is complementary to absolute temperature (CTAT), with a temperature coefficient of approximately −2 mV/K. If the ratio between the first and second resistor is chosen properly, the first order effects of the temperature dependency of the diode and the PTAT current will cancel out.
The diode voltage has a negative temperature coefficient (i.e. it decreases with increasing temperature), and the junction voltage difference has a positive temperature coefficient. When added in the proportion required to make these coefficients cancel out, the resultant constant value is a voltage equal to the bandgap voltage of the ...
A temperature coefficient describes the relative change of a physical property that is associated with a given change in temperature. For a property R that changes when the temperature changes by dT , the temperature coefficient α is defined by the following equation:
Note that the saturation current is not a constant for a given device; it varies with temperature; this variance is the dominant term in the temperature coefficient for a diode. A common rule of thumb is that it doubles for every 10 °C rise in temperature. [3]
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