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AMAT's three parameters hit time (or hit latency), miss rate, and miss penalty provide a quick analysis of memory systems. Hit latency (H) is the time to hit in the cache. Miss rate (MR) is the frequency of cache misses, while average miss penalty (AMP) is the cost of a cache miss in terms of time. Concretely it can be defined as follows.
It refers to the average time it takes to perform a memory access. It is the addition of the execution time for the memory instructions and the memory stall cycles. The execution time is the time for a cache access, and the memory stall cycles include the time to service a cache miss and access lower levels of memory. If the access latency ...
The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS
Access time is the time delay or latency between a request to an electronic system, and the access being initiated or the requested data returned.. In computer and software systems, it is the time interval between the point where an instruction control unit initiates a call to retrieve data or a request to store data, and the point at which delivery of the data is completed or the storage is ...
A hard disk head on an access arm resting on a hard disk platter. The access time or response time of a rotating drive is a measure of the time it takes before the drive can actually transfer data. The factors that control this time on a rotating drive are mostly related to the mechanical nature of the rotating disks and moving heads. It is ...
The average memory reference time is [1] = + + where = miss ratio = 1 - (hit ratio) = time to make main-memory access when there is a miss (or, with a multi-level cache, average memory reference time for the next-lower cache)
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RAM with an access time of 70 ns will output valid data within 70 ns from the time that the address lines are valid. Some SRAM cells have a page mode, where words of a page (256, 512, or 1024 words) can be read sequentially with a significantly shorter access time (typically approximately 30 ns). The page is selected by setting the upper ...