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A typical goal when using a semi-volatile memory is to provide the high performance and durability associated with volatile memories while providing some benefits of non-volatile memory. For example, some non-volatile memory types experience wear when written. A worn cell has increased volatility but otherwise continues to work. Data locations ...
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The ...
The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory. Today [as of?], the most common memory cell architecture is MOS memory, which consists of metal–oxide–semiconductor (MOS) memory cells.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
A memory device is built from a grid of such "cells". The simplest method of reading is accomplished by measuring the electrical resistance of the cell. A particular cell is (typically) selected by powering an associated transistor that switches current from a supply line through the cell to ground.
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per ...
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
Dual-ported RAM (DPRAM), also called dual-port RAM, is a type of random-access memory (RAM) that can be accessed via two different buses.. A simple dual-port RAM may allow only read access through one of the ports and write access through the other, in which case the same memory location cannot be accessed simultaneously through the ports since a write operation modifies the data and therefore ...