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Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process.
A typical goal when using a semi-volatile memory is to provide the high performance and durability associated with volatile memories while providing some benefits of non-volatile memory. For example, some non-volatile memory types experience wear when written. A worn cell has increased volatility but otherwise continues to work. Data locations ...
For example a stick of RAM that has only 512 megabytes of transfer speed is too slow compared to a stick of RAM that has 16 gigabytes of transfer speeds. [5] Not only does the transfer speeds depend of how fast a RAM can process information, the type of stick of RAM depends as well. For example, there are sticks that can be used DDR3, DDR4 and ...
The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it.
The memory cells are laid out in rectangular arrays on the surface of the chip. The 1-bit memory cells are grouped in small units called words which are accessed together as a single memory address. Memory is manufactured in word length that is usually a power of two, typically N=1, 2, 4 or 8 bits.
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Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory . [ 2 ]