Ad
related to: quantum dot laser locking device
Search results
Results from the WOW.Com Content Network
Semiconductor saturable absorbers were used for laser mode-locking as early as 1974 when p-type germanium was used to mode lock a CO 2 laser which generated pulses of around 500 picoseconds. Modern SESAMs are III-V semiconductor single quantum well (SQW) or multiple quantum wells grown on semiconductor distributed Bragg reflectors (DBRs).
The quantum dot active region may also be engineered to operate at different wavelengths by varying dot size and composition. This allows quantum dot lasers to be fabricated to operate at wavelengths previously not possible using semiconductor laser technology. [1] One challenge in the further advances with quantum dot lasers is the presence of ...
Electrostatic-sensitive device; ... Mobile Tactical High-Energy Laser; Mode-locking; Mode coupling; ... Quantum dot laser; Quantum heterostructure;
The first step in processing quantum cascade gain material to make a useful light-emitting device is to confine the gain medium in an optical waveguide. This makes it possible to direct the emitted light into a collimated beam, and allows a laser resonator to be built such that light can be coupled back into the gain medium.
The development of quantum well devices is greatly attributed to the advancements in crystal growth techniques. This is because quantum well devices require structures that are of high purity with few defects. Therefore, having great control over the growth of these heterostructures allows for the development of semiconductor devices that can ...
The application of quantum mechanics was evident in several technologies. These include laser systems, transistors and semiconductor devices, as well as other devices such as MRI imagers. The UK Defence Science and Technology Laboratory (DSTL) grouped these devices as 'quantum 1.0' to differentiate them from what it dubbed as 'quantum 2.0 ...
Quantum dot laser: wide range. Medicine (laser scalpel, optical coherence tomography), display technologies (projection, laser TV), spectroscopy and telecommunications. Quantum well laser: 0.4-20 μm, depending on active region material. Telecommunications: Hybrid silicon laser: Mid-infrared: Low cost silicon integrated optical communications
Individual quantum dots can be created from two-dimensional electron or hole gases present in remotely doped quantum wells or semiconductor heterostructures called lateral quantum dots. The sample surface is coated with a thin layer of resist and a lateral pattern is then defined in the resist by electron beam lithography .
Ad
related to: quantum dot laser locking device