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Because silicon dioxide is a native oxide of silicon it is more widely used compared to other semiconductors like gallium arsenide or indium phosphide. Silicon dioxide could be grown on a silicon semiconductor surface. [46] Silicon oxide layers could protect silicon surfaces during diffusion processes, and could be used for diffusion masking ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
In 1955, Carl Frosch and Lincoln Derick at Bell Labs accidentally discovered that silicon dioxide (SiO 2) could be grown on silicon. [40] [41] By 1957 Frosch and Derick published their work on the first manufactured SiO 2 semiconductor oxide transistor: the first planar transistors, in which drain and source were adjacent at the same surface. [42]
It is also used in semiconductor electronics. It is manufactured from silicon dioxide and carbon in an Acheson furnace between 1600 and 2500 °C. There are 250 known crystalline forms with alpha silicon carbide the most common. Silicon itself is an important semiconductor material used in microchips.
In the high-frequency region, which extends from radio frequencies to the far infrared and terahertz region, the plasma frequency of the electron gas is much greater than the electromagnetic propagation frequency, so the refractive index n of a metal is very nearly a purely imaginary number. In the low frequency regime, the effective relative ...
In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide.High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device.
A semiconductor is a material that is between the conductor and insulator in ability to conduct electrical current. [1] In many cases their conducting properties may be altered in useful ways by introducing impurities (" doping ") into the crystal structure .
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8] [9] [10] SOI MOSFET devices are adapted for use by the computer industry.