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Flash memory [3] is used in computers, PDAs, digital audio players, digital cameras, mobile phones, synthesizers, video games, scientific instrumentation, industrial robotics, and medical electronics. Flash memory has a fast read access time but it is not as fast as static RAM or ROM. In portable devices, it is preferred to use flash memory ...
Many past microcontrollers included both (flash memory for the firmware and a small EEPROM for parameters), though the trend with modern microcontrollers is to emulate EEPROM using flash. As of 2020, flash memory costs much less than byte-programmable EEPROM and is the dominant memory type wherever a system requires a significant amount of non ...
5D optical data storage (also branded as Superman memory crystal, [1] a reference to the Kryptonian memory crystals from the Superman franchise) is an experimental nanostructured glass for permanently recording digital data using a femtosecond laser writing process. [2]
Examples of non-volatile memory are flash memory and ROM, PROM, EPROM, and EEPROM memory. Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for CPU cache. Most semiconductor memory is organized into memory cells each storing one bit (0 or 1).
EEPROM microcontrollers became more popular in 1993 when Microchip introduced PIC16C84 [8] and Atmel introduced an 8051-core microcontroller that was first one to use NOR Flash memory to store the firmware. [10] Today's microcontrollers almost all use flash memory, with a few models using FRAM and some ultra-low-cost parts still using OTP or ...
Universal Flash Storage (UFS) is a flash storage specification for digital cameras, mobile phones and consumer electronic devices. [1] [2] It was designed to bring higher data transfer speed and increased reliability to flash memory storage, while reducing market confusion and removing the need for different adapters for different types of ...
Development of 3D XPoint began around 2012. [8] Intel and Micron had developed other non-volatile phase-change memory (PCM) technologies previously; [note 1] Mark Durcan of Micron said 3D XPoint architecture differs from previous offerings of PCM, and uses chalcogenide materials for both selector and storage parts of the memory cell that are faster and more stable than traditional PCM ...
Flash memory is produced using semiconductor linewidths of 30 nm at Samsung (2007) while FeRAMs are produced in linewidths of 350 nm at Fujitsu and 130 nm at Texas Instruments (2007). Flash memory cells can store multiple bits per cell (currently 4 in the highest density NAND flash devices), and the number of bits per flash cell is projected to ...