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Electron-beam physical vapor deposition, or EBPVD, is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous phase.
Physical vapor deposition (PVD), sometimes called physical vapor transport (PVT), describes a variety of vacuum deposition methods which can be used to produce thin films and coatings on substrates including metals, ceramics, glass, and polymers. PVD is characterized by a process in which the material transitions from a condensed phase to a ...
Deposition is the geological process in which sediments, soil and rocks are added to a landform or landmass. Wind, ice, water, and gravity transport previously weathered surface material, which, at the loss of enough kinetic energy in the fluid, is deposited, building up layers of sediment.
Focused ion beam, also known as FIB, is a technique used particularly in the semiconductor industry, materials science and increasingly in the biological field for site-specific analysis, deposition, and ablation of materials. A FIB setup is a scientific instrument that resembles a scanning electron microscope (SEM).
When the vapor source is a liquid or solid, the process is called physical vapor deposition (PVD), [3] which is used in semiconductor devices, thin-film solar panels, and glass coatings. [4] When the source is a chemical vapor precursor, the process is called chemical vapor deposition (CVD).
Auger electron spectroscopy (AES) Secondary ion mass spectrometry (SIMS) Thermal desorption spectroscopy (TPD) Thin film growth and preparation techniques with stringent requirements for purity, such as molecular beam epitaxy (MBE), UHV chemical vapor deposition (CVD), atomic layer deposition (ALD) and UHV pulsed laser deposition (PLD)
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices , including transistors . [ 1 ] MBE is used to make diodes and MOSFETs (MOS field-effect transistors ) at microwave frequencies, and to manufacture the lasers used to read optical discs ...
The mean free path turns out to be minimal (5–10 Å) in the energy range of low-energy electrons (20–200 eV). [1] This effective attenuation means that only a few atomic layers are sampled by the electron beam, and, as a consequence, the contribution of deeper atoms to the diffraction progressively decreases.