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This is an accepted version of this page This is the latest accepted revision, reviewed on 8 October 2024. Circuit arrangement of four diodes Diode bridge Diode bridge in various packages Type Semiconductor Inventor Karol Pollak in 1895 Electronic symbol 2 alternating-current (AC) inputs converted into 2 direct-current (DC) outputs A hand-made diode bridge. The silver band on the diodes ...
A silicon-controlled switch (SCS) behaves nearly the same way as an SCR; but there are a few differences. Unlike an SCR, an SCS switches off when a positive voltage/input current is applied to another anode gate lead. Unlike an SCR, an SCS can be triggered into conduction when a negative voltage/output current is applied to that same lead.
There is also a recovery concern: a diode's current will not decrease immediately when switching from forward-biased to reverse-biased, because discharging its stored charge takes a finite amount of time (t rr or reverse recovery time). [1] In a diode OR gate, if two or more of the inputs are high and one switches to low, recovery issues will ...
Their low efficiency required a much higher forward voltage to be applied (typically 1.4 to 1.7 V per "cell", with multiple cells stacked so as to increase the peak inverse voltage rating for application in high voltage rectifiers), and required a large heat sink (often an extension of the diode's metal substrate), much larger than the later ...
The reverse bias rating of the N-drift region to collector P+ diode is usually only of tens of volts, so if the circuit application applies a reverse voltage to the IGBT, an additional series diode must be used. The minority carriers injected into the N-drift region take time to enter and exit or recombine at turn-on and turn-off.
However, during an ESD event across the domains, one would want a path for the high current to traverse. Without the antiparallel diodes in place, the voltage induced by the ESD event may result in the current following an unknown path that often leads to damage of the device. With the diodes in place the current can travel in either direction.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
Main Terminal 1 (MT1) and Main Terminal 2 (MT2) are also referred to as Anode 1 (A1) and Anode 2 (A2) respectively. [2] The relative sensitivity depends on the physical structure of a particular triac, but as a rule, quadrant I is the most sensitive (least gate current required), and quadrant 4 is the least sensitive (most gate current required).