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In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device.
Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", / siːmɑːs /, /- ɒs /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [ 1 ] CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors ...
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. It comes in two types: junction FET (JFET) and metal-oxide-semiconductor FET (MOSFET). FETs have three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to ...
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages.
Discrete MOSFET devices are widely used in applications such as switch mode power supplies, variable-frequency drives, and other power electronics applications where each device may be switching thousands of watts. Radio-frequency amplifiers up to the UHF spectrum use MOSFET transistors as analog signal and power amplifiers.
A small current at the base terminal, flowing between the base and the emitter, can control or switch a much larger current between the collector and emitter. A field-effect transistor (FET) has terminals labeled gate, source and drain. A voltage at the gate can control a current between source and drain.
The manufacture of semiconductors controls precisely the location and concentration of p- and n-type dopants. The connection of n-type and p-type semiconductors form p–n junctions. The most common semiconductor device in the world is the MOSFET (metal–oxide–semiconductor field-effect transistor), [1] also called the MOS transistor.
An SOI MOSFET is a metal–oxide–semiconductor field-effect transistor (MOSFET) device in which a semiconductor layer such as silicon or germanium is formed on an insulator layer which may be a buried oxide (BOX) layer formed in a semiconductor substrate. [8][9][10] SOI MOSFET devices are adapted for use by the computer industry. [citation needed] The buried oxide layer can be used in SRAM ...