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If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current–voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually ...
A nanowire MOSFET's current–voltage characteristic (left, using logarithmic y-axis) and a simulation of the electron density (right) forming a conductive inversion channel which connects at the ~0.45 V threshold voltage.
The MOSFET (metal–oxide–semiconductor field-effect transistor) utilizes an insulator (typically SiO 2) between the gate and the body. This is by far the most common type of FET. The DGMOSFET (dual-gate MOSFET) or DGMOS, a MOSFET with two insulated gates. The IGBT (insulated-gate bipolar transistor) is a device for power control. It has a ...
In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3 V negative (the drain, by ...
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.
The technique uses a metal–semiconductor junction (Schottky barrier) or a p–n junction [1] or a MOSFET to create a depletion region, a region which is empty of conducting electrons and holes, but may contain ionized donors and electrically active defects or traps. The depletion region with its ionized charges inside behaves like a capacitor.
where or Vtsat is the threshold voltage measured at a supply voltage (the high drain voltage), and or Vtlin is the threshold voltage measured at a very low drain voltage, typically 0.05 V or 0.1 V. is the supply voltage (the high drain voltage) and is the low drain voltage (for a linear part of device I-V characteristics). The minus in the ...
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