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  2. Random-access memory - Wikipedia

    en.wikipedia.org/wiki/Random-access_memory

    Random-access memory (RAM; / r æ m /) is a form of electronic computer memory that can be read and changed in any order, typically used to store working data and machine code.

  3. DDR4 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR4_SDRAM

    Consequently, the proportion of die allocated to the memory array itself has decreased over time: from 70–78% for SDRAM and DDR1 to 47% for DDR2, 38% for DDR3, and potentially less than 30% for DDR4. [46] The specification defined standards for ×4, ×8 and ×16 memory devices with capacities of 2, 4, 8 and 16 Gbit. [1] [47]

  4. DRAM price fixing scandal - Wikipedia

    en.wikipedia.org/wiki/DRAM_price_fixing_scandal

    DRAM SO-DIMM. In 2002, the United States Department of Justice, under the Sherman Antitrust Act, began a probe into the activities of dynamic random-access memory (DRAM) manufacturers in response to claims by US computer makers, including Dell and Gateway, that inflated DRAM pricing was causing lost profits and hindering their effectiveness in the marketplace.

  5. Computer memory - Wikipedia

    en.wikipedia.org/wiki/Computer_memory

    Historical lowest retail price of computer memory and storage Electromechanical memory used in the IBM 602, an early punch multiplying calculator Detail of the back of a section of ENIAC, showing vacuum tubes Williams tube used as memory in the IAS computer c. 1951 8 GB microSDHC card on top of 8 bytes of magnetic-core memory (1 core is 1 bit.)

  6. DDR5 SDRAM - Wikipedia

    en.wikipedia.org/wiki/DDR5_SDRAM

    Double Data Rate 5 Synchronous Dynamic Random-Access Memory (DDR5 SDRAM) is a type of synchronous dynamic random-access memory. Compared to its predecessor DDR4 SDRAM , DDR5 was planned to reduce power consumption, while doubling bandwidth . [ 5 ]

  7. Average memory access time - Wikipedia

    en.wikipedia.org/wiki/Average_memory_access_time

    AMAT's three parameters hit time (or hit latency), miss rate, and miss penalty provide a quick analysis of memory systems. Hit latency (H) is the time to hit in the cache. Miss rate (MR) is the frequency of cache misses, while average miss penalty (AMP) is the cost of a cache miss in terms of time. Concretely it can be defined as follows.

  8. Magnetoresistive RAM - Wikipedia

    en.wikipedia.org/wiki/Magnetoresistive_RAM

    DRAM uses a small capacitor as a memory element, wires to carry current to and from it, and a transistor to control it – referred to as a "1T1C" cell. This makes DRAM the highest-density RAM currently available, and thus the least expensive, which is why it is used for the majority of RAM found in computers.

  9. List of in-memory databases - Wikipedia

    en.wikipedia.org/wiki/List_of_in-memory_databases

    In-memory database and application server (data grid) TerminusDB: TerminusDB (formerly DataChemist) 2019 JavaScript, Python, Prolog, Rust, JSON-LD: Open Source (Apache 2.0) Open source in-memory graph database designed for knowledge graph representation [13] TimesTen: now Oracle Corporation: 1997 Java, JDBC, ODBC, SQL, PLSQL, C Proprietary