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Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films .
In the metal organic chemical vapor deposition (MOCVD) technique, reactant gases are combined at elevated temperatures in the reactor to cause a chemical interaction, resulting in the deposition of materials on the substrate. A reactor is a chamber made of a material that does not react with the chemicals being used.
In chemistry, a precursor is a compound that contributes in a chemical reaction and produces another compound, or a chemical substance that gives rise to another more significant chemical product. Since several years metal-organic compounds are widely used as molecular precursors for the chemical vapor deposition process (MOCVD).
When the vapor source is a liquid or solid, the process is called physical vapor deposition (PVD), [3] which is used in semiconductor devices, thin-film solar panels, and glass coatings. [4] When the source is a chemical vapor precursor, the process is called chemical vapor deposition (CVD).
Island growth is a physical model of deposited film growth and chemical vapor deposition. [1] Introduction. When atoms are deposited slowly onto a flat surface, ...
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Chemical vapor deposition; Close-space sublimation; Combustion chemical vapor deposition; D. Diamond-like carbon; Dip-coating; E. Electron-beam physical vapor deposition;
Homoepitaxial growth of semiconductor thin films are generally done by chemical or physical vapor deposition methods that deliver the precursors to the substrate in gaseous state. For example, silicon is most commonly deposited from silicon tetrachloride (or germanium tetrachloride ) and hydrogen at approximately 1200 to 1250 °C: [ 12 ]