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Because silicon dioxide is a native oxide of silicon it is more widely used compared to other semiconductors like gallium arsenide or indium phosphide. Silicon dioxide could be grown on a silicon semiconductor surface. [46] Silicon oxide layers could protect silicon surfaces during diffusion processes, and could be used for diffusion masking ...
Silicon dioxide (SiO 2) has been used as a gate oxide material for decades. As metal–oxide–semiconductor field-effect transistors (MOSFETs) have decreased in size, the thickness of the silicon dioxide gate dielectric has steadily decreased to increase the gate capacitance (per unit area) and thereby drive current (per device width), raising device performance.
Silicon oxide may refer to either of the following: Silicon dioxide or quartz, SiO 2, very well characterized; Silicon monoxide, ...
Silicon–oxygen single bonds are longer (1.6 vs 1.4 Å) but stronger (452 vs. about 360 kJ mol −1) than carbon–oxygen single bonds. [1] However, silicon–oxygen double bonds are weaker than carbon–oxygen double bonds (590 vs. 715 kJ mol −1 ) due to a better overlap of p orbitals forming a stronger pi bond in the latter.
Thermal oxidation of silicon is usually performed at a temperature between 800 and 1200 °C, resulting in so called High Temperature Oxide layer (HTO). It may use either water vapor (usually UHP steam ) or molecular oxygen as the oxidant; it is consequently called either wet or dry oxidation.
The insulating silicon dioxide layer is formed through a process of self-limiting oxidation, which is described by the Deal–Grove model. A conductive gate material is subsequently deposited over the gate oxide to form the transistor. The gate oxide serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm transverse ...
Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds (in case of synchronous circuits) and lower heat dissipation. In conversation such materials may be referred to as "low-k" (spoken "low-kay") rather than "low-κ" (low-kappa).
The oxidation of silicon during this stage occurs at the silicon/silicon dioxide interface. As oxidation continues, the silicon dioxide layer thickens, and the distance the oxidants must travel to reach the silicon increases. The oxide growth rate is limited by the diffusion of the oxidants through silicon dioxide. There are two methods of ...
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