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The structure providing the capacitance, as well as the transistors that control access to it, is collectively referred to as a DRAM cell. They are the fundamental building block in DRAM arrays. Multiple DRAM memory cell variants exist, but the most commonly used variant in modern DRAMs is the one-transistor, one-capacitor (1T1C) cell.
While the access latency of DRAM is fundamentally limited by the DRAM array, DRAM has very high potential bandwidth because each internal read is actually a row of many thousands of bits. To make more of this bandwidth available to users, a double data rate interface was developed. This uses the same commands, accepted once per cycle, but reads ...
DRAM stores a bit of data using a transistor and capacitor pair (typically a MOSFET and MOS capacitor, respectively), [32] which together comprise a DRAM cell. The capacitor holds a high or low charge (1 or 0, respectively), and the transistor acts as a switch that lets the control circuitry on the chip read the capacitor's state of charge or ...
Two types of DIMMs (dual in-line memory modules): a 168-pin SDRAM module (top) and a 184-pin DDR SDRAM module (bottom). Memory modules of SK Hynix. In computing, a memory module or RAM stick is a printed circuit board on which memory integrated circuits are mounted.
The first notch is the DRAM key position, which represents RFU (reserved future use), registered, and unbuffered DIMM types (left, middle and right position, respectively). The second notch is the voltage key position, which represents 5.0 V, 3.3 V, and RFU DIMM types (order is the same as above).
Low-Power Double Data Rate (LPDDR), also known as LPDDR SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) that consumes less power than other random access memory designs and is thus targeted for mobile computing devices such as laptop computers and smartphones.
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Released to the market in 2014, [2] [3] [4] it is a variant of dynamic random-access memory (DRAM), some of which have been in use since the early 1970s, [5] and a higher-speed successor to the DDR2 and DDR3 technologies.