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The memristance state of a TiF memristor can be controlled by both the flux and the charge [DOI: 10.1063/1.4775718]. A TiF memristor was first demonstrated by Heidemarie Schmidt and her team in 2011 [DOI: 10.1063/1.3601113]. This TiF memristor is composed of a BiFeO 3 thin film between metallically conducting electrodes, one gold, the other ...
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
In one of the technical reports [3] the memistor was described as follows: . Like the transistor, the memistor is a 3-terminal element. The conductance between two of the terminals is controlled by the time integral of the current in the third, rather than its instantaneous value as in the transistor.
The main determinant of a memory system's cost is the density of the components used to make it up. Smaller components, and fewer of them, mean that more "cells" can be packed onto a single chip, which in turn means more can be produced at once from a single silicon wafer.
The stoichiometry, or Ge:Sb:Te element ratio, is 2:2:5 in GST. When GST is heated to a high temperature (over 600 °C), its chalcogenide crystallinity is lost. Once cooled, it is frozen into an amorphous glass-like state [14] and its electrical resistance is high.
The reasons for this surge of interest are manifold. The performance of OFETs, which can compete with that of amorphous silicon (a-Si) TFTs with field-effect mobilities of 0.5–1 cm 2 V −1 s −1 and ON/OFF current ratios (which indicate the ability of the device to shut down) of 10 6 –10 8, has improved significantly.
Thirty-seven years after he predicted its existence, a working solid-state memristor was created by a team led by R. Stanley Williams at Hewlett Packard. [ 5 ] [ 6 ] Alongside Tamas Roska , Chua also introduced the first algorithmically programmable analog cellular neural network (CNN) processor.
The current–voltage characteristics of four devices: a resistor with large resistance, a resistor with small resistance, a P–N junction diode, and a battery with nonzero internal resistance.