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Electrical Engineering questions and answers. Consider a Si p-n junction solar cell with area, A=6×10-5cm2, which has following propertiesat 300K. For Si, assume {:ni=1E10cm-3;kT=0.026eV]a) What is the built-in voltage, Vbi, of the junction?b) What will be the barrier height, φ, (absolute value, in eV ) in the p-n junction ...
In a p^+-n junction, the n-doping N_d is doubled. How do the following change if everything else remains unchanged? Indicate only increase or decrease. Junction Capac stance Built-in potential Breakdown voltage Ohmic losses
In this p/n junction the blue area will be charged. – type semiconductor - type semiconductor .Si. .si . 0.01% B. 0.01% P. P. junction Your solution’s ready to go! Our expert help has broken down your problem into an easy-to-learn solution you can count on.
An abrupt Si p-n junction has N_a = 10^17 cm^-3 on the p side and N_d = 10^16 cm^-3 on the n side. At 300 K, calculate the Fermi levels, built-in potential and maximum electrical field as well as draw an equilibrium band diagram. A Si p+-n junction has a donor doping of 5 * 10^16 cm^-3 on the n side and a cross sectional area of 10^-3 cm^2.
Our expert help has broken down your problem into an easy-to-learn solution you can count on. See Answer. Question: (a) Describe the behaviour of positive and negative charges within a p−n junction. Use a sketch (drawn by hand) to support your description. (b) Show your knowledge and understanding of the actions involved with the following ...
Physics questions and answers. A Si p-n junction with cross-sectional area A = 0.001 cm² is formed with Na 1015 cm-"and No 1020 cm-3. Calculate: (a) Contact potential, Vo. (b) Space-charge width at equilibrium (zero bias). (c) Current with a forward bias of 0.7 V. Assume that the current is diffu- sion dominated.
A Si p^+ -n junction 10^-2 cm^2 in area has N_d = 10^15 cm^-3 doping on the n side. Calculate the junction capacitance with a reverse bias of 10 V. (b) An abrupt p^+ -n junction is formed in Si with a donor doping of N_d = 10^15 cm^3. What is the depletion region thickness W just prior to avalanche breakdown?
Question: QUESTION 2 = 2.1 Draw a labelled diagram showing how the energy level diagrams of p-type and n-type semiconductor material are aligned when the fusion process is used to form a p-n junction. Clearly show the "POTENTIAL HILL”. (6) 2.2 2.2.1 Design an unregulated power supply that uses two silicon diodes, which will deliver an average ...
Question: Which of the following statements, related to a P-N junction, are correct? (a) The direction of the built-in electric field in the depletion layer is from the N-type toward the P-type region. (b) At reverse bias, the Fermi level is constant for the entire P−N junction system. (c) The net (effective) charge density at each point of ...
Electrical Engineering questions and answers. b) For a silicon p-n junction diode i) For what value of reverse voltage will the reverse current reach 90%of its saturation value at room temperature? (6 Marks) ii) Find the ratio of current for a forward bias of 0.2V to the reverse saturation current for the same magnitude of reverse bias voltage ...