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Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
Besides issues with size a significant challenge of modern SRAM cells is a static current leakage. The current, that flows from positive supply (V dd), through the cell, and to the ground, increases exponentially when the cell's temperature rises. The cell power drain occurs in both active and idle states, thus wasting useful energy without any ...
[1] [2] A random-access memory device allows data items to be read or written in almost the same amount of time irrespective of the physical location of data inside the memory, in contrast with other direct-access data storage media (such as hard disks and magnetic tape), where the time required to read and write data items varies significantly ...
Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. [1] [2] [3] An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts.
The drive to increase both density and, to a lesser extent, performance, required denser designs. This was strongly motivated by economics, a major consideration for DRAM devices, especially commodity DRAMs. The minimization of DRAM cell area can produce a denser device and lower the cost per bit of storage.
For one, each application of the current physically degrades the cell, such that the cell will eventually be unwritable. Write cycles on the order of 10 5 to 10 6 are typical, limiting flash applications to roles where constant writing is not common. The current also requires an external circuit to generate, using a system known as a charge ...
Crossbar filed patents relating to the development, commercialization and manufacturing of RRAM technology. [ 5 ] In August 2013, Crossbar emerged from stealth mode and announced the development of a memory array at a commercial semiconductor device fabrication facility.