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Some of the address space may be shared between RAM, peripherals, and read-only memory. In the case of a microcontroller with no external RAM, the size of the RAM array is limited by the size of the integrated circuit die. In a packaged system, only enough RAM may be provided for the system's required functions, with no provision for addition ...
The memory controller can begin a read from the second bank while a read from the first bank is in progress, using the two OE signals to only permit one result to appear on the data bus at a time. RAS-only refresh
A system with 512 MB of RAM (the minimum requirement for Windows Vista) can see significant gains from ReadyBoost. [14] [15] In one test case, adding 1 GB of ReadyBoost memory sped up an operation from 11.7 seconds to 2 seconds. However, increasing the physical memory (RAM) from 512 MB to 1 GB (without ReadyBoost) reduced it to 0.8 seconds. [16]
This type of SDRAM is slower than the DDR variants, because only one word of data is transmitted per clock cycle (single data rate). But this type is also faster than its predecessors extended data out DRAM (EDO-RAM) and fast page mode DRAM (FPM-RAM) which took typically two or three clocks to transfer one word of data.
Seth Lloyd calculated [9] the computational abilities of an "ultimate laptop" formed by compressing a kilogram of matter into a black hole of radius 1.485 × 10 −27 meters, concluding that it would only last about 10 −19 seconds before evaporating due to Hawking radiation, but that during this brief time it could compute at a rate of about ...
The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS
A model, called Concurrent-AMAT (C-AMAT), is introduced for more accurate analysis of current memory systems. More information on C-AMAT can be found in the external links section. AMAT's three parameters hit time (or hit latency), miss rate, and miss penalty provide a quick analysis of memory systems. Hit latency (H) is the time to hit in the ...
For instance, under a 1,066MHz FSB, the only choices regarding memory speed in the MRC are DDR2-667 and DDR2-800. We have to provide additional choices. We have to provide additional choices. For people who want higher memory frequency, we used the setting of 800MHz FSB:DDR2-800 in MRC, but overclocked it to work with a 1,066MHz FSB, so we ...