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The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [62] [63] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field. In a metal , the electron density that responds to applied fields is so large that an external electric field can penetrate only a very short distance into the material.
The gate in a conventional (field-effect) transistor determines the conductance between the source and drain electrode by controlling the density of charge carriers between them, whereas the gate in a single-molecule transistor controls the possibility of a single electron to jump on and off the molecule by modifying the energy of the molecular ...
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. [1] JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors , or to build amplifiers .
A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes as the channel material, instead of bulk silicon, as in the traditional MOSFET structure. There have been major developments since CNTFETs were first demonstrated in 1998. [1] [2]
The threshold voltage, commonly abbreviated as V th or V GS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (V GS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency.
The concept of a field-effect transistor (FET) was first proposed by Julius Edgar Lilienfeld, who received a patent for his idea in 1930. [6] He proposed that a field-effect transistor behaves as a capacitor with a conducting channel between a source and a drain electrode. Applied voltage on the gate electrode controls the amount of charge ...