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The gate in a conventional (field-effect) transistor determines the conductance between the source and drain electrode by controlling the density of charge carriers between them, whereas the gate in a single-molecule transistor controls the possibility of a single electron to jump on and off the molecule by modifying the energy of the molecular ...
In physics, the field effect refers to the modulation of the electrical conductivity of a material by the application of an external electric field. In a metal , the electron density that responds to applied fields is so large that an external electric field can penetrate only a very short distance into the material.
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
MOSFET, showing gate (G), body (B), source (S), and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).. The MOSFET (metal–oxide–semiconductor field-effect transistor) [1] is a type of insulated-gate field-effect transistor (IGFET) that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
The VMOS was invented by Hitachi in 1969, [11] when they introduced the first vertical power MOSFET in Japan. [12] T. J. Rodgers, while he was a student at Stanford University, filed a US patent for a VMOS in 1973. [13] Siliconix commercially introduced a VMOS in 1975. [11] The VMOS later developed into what became known as the vertical DMOS . [14]
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
The tetrode field-effect transistor [1] or field-effect tetrode is a solid-state semiconductor device, constructed by creating two field-effect channels back-to-back, with a junction between. It is a four-terminal device which does not have specific gate terminals because each channel is a gate for the other, [ 2 ] the voltage conditions ...
A ferroelectric field-effect transistor (Fe FET) is a type of field-effect transistor that includes a ferroelectric material sandwiched between the gate electrode and source-drain conduction region of the device (the channel). Permanent electrical field polarisation in the ferroelectric causes this type of device to retain the transistor's ...