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Etching tanks used to perform Piranha, hydrofluoric acid or RCA clean on 4-inch wafer batches at LAAS technological facility in Toulouse, France. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer ...
In semiconductor manufacturing, isotropic etching is a method commonly used to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma-phase, [1] although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide etching are more often used.
Atomic layer etching (ALE) is an emerging technique in semiconductor manufacture, in which a sequence alternating between self-limiting chemical modification steps which affect only the top atomic layers of the wafer, and etching steps which remove only the chemically-modified areas, allows the removal of individual atomic layers.
Metal Assisted Chemical Etching (also known as MACE) is the process of wet chemical etching of semiconductors (mainly silicon) with the use of a metal catalyst, usually deposited on the surface of a semiconductor in the form of a thin film or nanoparticles.
Dry etching is used in conjunction with photolithographic techniques to attack certain areas of a semiconductor surface in order to form recesses in material.. Applications include contact holes (which are contacts to the underlying semiconductor substrate), via holes (which are holes that are formed to provide an interconnect path between conductive layers in the layered semiconductor device ...
Simplified illustration of the process of fabrication of a CMOS inverter on p-type substrate in semiconductor microfabrication. Each etch step is detailed in the following image. The diagrams are not to scale, as in real devices, the gate, source, and drain contacts are not normally located in the same plane. Detail of an etch step.
Xenon difluoride, bromine trifluoride, chlorine trifluoride and fluorine can be used for gaseous silicon etching. [6] [7] Xenon difluoride is most commonly used to etch silicon in academia and industry, because it has a high selectivity towards other semiconductor materials, allows high process control and is easy to use at room temperature. [8 ...
etching (etch, etch processing) – chemically removing layers from the surface of a wafer during semiconductor device fabrication fab – a semiconductor fabrication plant fan-out wafer-level packaging – an extension of wafer-level packaging in which the wafer is diced, dies are positioned on a carrier wafer and molded, and then a ...