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As channel length decreases, the barrier φ B to be surmounted by an electron from the source on its way to the drain reduces. Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.
To combat drain-induced barrier lowering (DIBL), MOSFET substrate near source and drain region are heavily doped (p+ in case of NMOS and n+ in case of PMOS) to reduce the width of the depletion region in the vicinity of source/substrate and drain/substrate junctions (called halo doping to describe the limitation of this heavy doping to the ...
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. [1] [2]
Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.
Channel length modulation (CLM) is an effect in field effect transistors, a shortening of the length of the inverted channel region with increase in drain bias for large drain biases. The result of CLM is an increase in current with drain bias and a reduction of output resistance. It is one of several short-channel effects in MOSFET scaling.
Gate-induced drain leakage, a leakage mechanism in MOSFETs due to large field effect in the drain junction; Generic Interface Definition Language, ...
The downstream side is the pipe or open air where the PORV directs its exhaust. The outlet pipe is typically larger than the inlet. 2 in × 3 in (51 mm × 76 mm), 3 in × 4 in (76 mm × 102 mm), 4 in × 6 in (100 mm × 150 mm), 6 in × 8 in (150 mm × 200 mm), 8 in × 10 in (200 mm × 250 mm) are some common sizes.
For the SIT, the breakdown voltage is not limited by the surface breakdown between gate and drain, allowing it to operate at a very high current and voltage. The SIT has a current-voltage characteristic similar to a vacuum tube triode and it was therefore used in high-end audio products, including power amplifiers from Sony in the second half ...
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