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Silicon carbide (SiC), also known as carborundum (/ ˌ k ɑːr b ə ˈ r ʌ n d əm /), is a hard chemical compound containing silicon and carbon. A wide bandgap semiconductor , it occurs in nature as the extremely rare mineral moissanite , but has been mass-produced as a powder and crystal since 1893 for use as an abrasive .
Silicon carbide (SiC) is widely used as a ceramic or example in car brakes and bulletproof vests. It is also used in semiconductor electronics. It is manufactured from silicon dioxide and carbon in an Acheson furnace between 1600 and 2500 °C. There are 250 known crystalline forms with alpha silicon carbide the most common.
Fairchild Semiconductor's Silicon Carbide (SiC) Solutions Offer Industry-Leading Efficiency and Improved Reliability in Power Conversion Systems SiC Bipolar Junction Transistors (BJTs), First in ...
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Silicon carbide. Silicon carbide (SiC) was first made by Edward Goodrich Acheson in 1891, who named it carborundum to reference its intermediate hardness and abrasive power between diamond (an allotrope of carbon) and corundum (aluminium oxide). He soon founded a company to manufacture it, and today about one million tonnes are produced each ...
A boule of silicon is the starting material for most of the integrated circuits used today. In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique [ 2 ] and the Czochralski process , which result in a cylindrical rod of material.
Silicon carbide was a useful material in jewelry making due to its abrasive properties, and this was the first commercial application of the Acheson process. [ 3 ] In the 1940s, first the Manhattan Project and then the Soviet atomic bomb project adopted Acheson process for nuclear graphite manufacturing (see details there).
The Lely method, also known as the Lely process or Lely technique, is a crystal growth technology used for producing silicon carbide crystals for the semiconductor industry. The patent for this method was filed in the Netherlands in 1954 and in the United States in 1955 by Jan Anthony Lely of Philips Electronics . [ 1 ]