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Figure 1: Illustration of the cause of antenna effect. M1 and M2 are the first two metal interconnect layers. The antenna effect, more formally plasma induced gate oxide damage, is an effect that can potentially cause yield and reliability problems during the manufacture of MOS integrated circuits.
Electrothermal-chemical technology, uses plasma cartridge, Triple coaxial plasma igniter; Electrodeless plasma excitation; Electrodeless plasma thruster; Electrodynamic tether, Flowing Plasma Effect; Electrohydrodynamic thruster; Electrolaser, Laser-Induced Plasma Channel; Electromagnetic electron wave; Electromagnetic field; Electromagnetic pulse
In an ionized gas plasma antenna, a gas is ionized to create a plasma. Unlike gases, plasmas have very high electrical conductivity so it is possible for radio frequency signals to travel through them so that they act as a driven element (such as a dipole antenna) to radiate radio waves, or to receive them.
The various modes can also be classified according to whether they propagate in an unmagnetized plasma or parallel, perpendicular, or oblique to the stationary magnetic field. Finally, for perpendicular electromagnetic electron waves, the perturbed electric field can be parallel or perpendicular to the stationary magnetic field.
Fig. 2. The construction of Inductively Coupled Plasma torch. [3] A: cooling gas tangential flow to the outer quartz tube B: discharge gas flow (usually Ar) C: flow of carrier gas with sample D: induction coil which forms the strong magnetic field inside the torch E: force vectors of the magnetic field F: the plasma torch (the discharge).
A positive corona is manifested as a uniform plasma across the length of a conductor. It can often be seen glowing blue/white, though many of the emissions are in the ultraviolet. The uniformity of the plasma is caused by the homogeneous source of secondary avalanche electrons described in the mechanism section, below. With the same geometry ...
PIII-process with ECR-plasma source and magnetron. Plasma-immersion ion implantation (PIII) [1] or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to ...
For example, touching or standing around an antenna while a high-power transmitter is in operation can cause burns. The mechanism is the same as that used in a microwave oven. [6] The heating effect varies with the power and the frequency of the electromagnetic energy, as well as the inverse square of distance to the source. The eyes and testes ...