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A current mirror is a circuit designed to copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. The current being "copied" can be, and sometimes is, a varying signal current.
The mirror circuit of Fig. 5 forces the drain current of M1 to equal the input current and the output configuration assures that the output current equals the drain current of M2. Expanding equation (8) in a two-variable Taylor series about i D 1 {\displaystyle \scriptstyle i_{D1}} and truncating after the first linear term, leads to an ...
Current in the reference transistor Q 1 is held constant, thereby fixing the compliance voltage. Plots assume I C1 = 10 mA, V A = 50 V, V CC = 5 V, I S = 10 fA, β 1, = 100 independently of current. The current dependence of the resistances r π and r O is discussed in the article hybrid-pi model. The current dependence of the resistor values is:
The current sourced or sunk at the inverting input is sensed by current mirrors inserted between the buffer and its power supply rails, and its mirrored copy is sourced or sunk into an internal high-impedance node. [4] The resulting positive or negative voltage at this node is interfaced to the outside world with the output buffer. [4]
This current drives Q7 further into conduction, which turns on current mirror Q5/Q6. Thus, the increase in Q3 emitter current is mirrored in an increase in Q6 collector current; the increased collector currents shunts more from the collector node and results in a decrease in base drive current for Q15.
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A von Neumann architecture scheme. The von Neumann architecture—also known as the von Neumann model or Princeton architecture—is a computer architecture based on the First Draft of a Report on the EDVAC, [1] written by John von Neumann in 1945, describing designs discussed with John Mauchly and J. Presper Eckert at the University of Pennsylvania's Moore School of Electrical Engineering.
Some models base the collector current correction factor on the collector–base voltage V CB (as described in base-width modulation) instead of the collector–emitter voltage V CE. [3] Using V CB may be more physically plausible, in agreement with the physical origin of the effect, which is a widening of the collector–base depletion layer ...