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Aluminium nitride (Al N) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K) [ 5 ] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
Aluminium titanium nitride (AlTiN) coated endmills using cathodic arc deposition technique. Titanium aluminium nitride (TiAlN) or aluminium titanium nitride (AlTiN; for aluminium contents higher than 50%) is a group of metastable hard coatings consisting of nitrogen and the metallic elements aluminium and titanium.
Nitrides of the group 7 and 8 transition metals tend to be nitrogen-poor, and decompose readily at elevated temperatures. For example, iron nitride, Fe 2 N decomposes at 200 °C. Platinum nitride and osmium nitride may contain N 2 units, and as such should not be called nitrides. [11] [12]
Aluminium oxynitride (marketed under the name ALON by Surmet Corporation [3]) is a transparent ceramic composed of aluminium, oxygen and nitrogen. Aluminium oxynitride is optically transparent (≥80% for 2 mm thickness) in the near-ultraviolet , visible, and mid-wave- infrared regions of the electromagnetic spectrum.
The Platinum Metals and their Alloys. New York: The International Nickel Company, Inc., 1941: 16. — "Values ranging from 21.3 to 21.5 gm/cm 3 at 20 °C have been reported for the density of annealed platinum; the best value being about 21.45 gm/cm 3 at 20 °C." 21.46 g/cm 3 — Rose, T. Kirke. The Precious Metals, Comprising Gold, Silver and ...
Aluminium gallium nitride (AlGaN) is a semiconductor material. It is any alloy of aluminium nitride and gallium nitride . The bandgap of Al x Ga 1−x N can be tailored from 4.3eV (xAl=0) to 6.2eV (xAl=1).
Its thermal expansion roughly matches gallium arsenide, silicon, indium phosphide, alumina, aluminium nitride, silicon nitride, and Direct Bonded Copper aluminium nitride. It is also compatible with some low temperature co-fired ceramics, e.g. Ferro A6M and A6S, Heraeus CT 2000, and Kyocera GL560. Its density at 25 °C is 3.01 g/cm 3.
Indium aluminium nitride (InAlN) is a direct bandgap semiconductor material used in the manufacture of electronic and photonic devices. It is part of the III-V group of semiconductors, being an alloy of indium nitride and aluminium nitride , and is closely related to the more widely used gallium nitride .