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The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.
A photodiode is a PIN structure or p–n junction. ... In some applications, photodiode arrays allow for high-speed parallel readout, ...
Design of a PSD using a PIN diode. The technical term PSD was first used in a 1957 publication by J.T. Wallmark for lateral photoelectric effect used for local measurements. On a laminar semiconductor, a so-called PIN diode is exposed to a tiny spot of light. This exposure causes a change in local resistance and thus electron flow in four ...
The silicon avalanche photodiode is a high-gain photon detector. They are "ideal for use in high-speed, low-light-level applications". [3] The avalanche photodiode is operated with a reverse bias voltage of up to hundreds of volts, slightly below its breakdown voltage.
An avalanche photodiode (APD) ... Therefore, high-speed operation is possible: commercial devices are available to speeds of at least 10 Gbit/s. [5]
They offer high-speed response and are commonly used in high-frequency applications. Avalanche Photodiodes (APDs): APDs are specialized photodiodes that incorporate avalanche multiplication. They have a high electric field region near the PN junction, which causes impact ionization and produces additional electron-hole pairs.
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