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A memory bank is a part of cache memory that is addressed consecutively in the total set of memory banks, i.e., when data item a(n) is stored in bank b, data item a(n + 1) is stored in bank b + 1. Cache memory is divided in banks to evade the effects of the bank cycle time (see above) [=> missing "bank cycle" definition, above]. When data is ...
A science fair or engineering fair is an event hosted by a school that offers students the opportunity to experience the practices of science and engineering for themselves. In the United States, the Next Generation Science Standards makes experiencing the practices of science and engineering one of the three pillars of science education.
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
(memory density) This is the total memory capacity of the chip. Example: 128 Mib. (memory depth) × (memory width) Memory depth is the memory density divided by memory width. Example: for a memory chip with 128 Mib capacity and 8-bit wide data bus, it can be specified as: 16 Meg × 8. Sometimes the "Mi" is dropped, as in 16×8.
When the allocator is asked to free the object's memory, it just adds the slot to the containing slab's list of free (unused) slots. The next call to create an object of the same type (or allocate memory of the same size) will return that memory slot (or some other free slot) and remove it from the list of free slots.
Synchronous memory interface is much faster as access time can be significantly reduced by employing pipeline architecture. Furthermore, as DRAM is much cheaper than SRAM, SRAM is often replaced by DRAM, especially in the case when a large volume of data is required. SRAM memory is, however, much faster for random (not block / burst) access.
Logic circuits without memory cells are called combinational, meaning the output depends only on the present input. But memory is a key element of digital systems. In computers, it allows to store both programs and data and memory cells are also used for temporary storage of the output of combinational circuits to be used later by digital systems.
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.