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The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.
A Schottky diode is a single metal–semiconductor junction, used for its rectifying properties. Schottky diodes are often the most suitable kind of diode when a low forward voltage drop is desired, such as in a high-efficiency DC power supply. Also, because of their majority-carrier conduction mechanism, Schottky diodes can achieve greater ...
Band diagram for Schottky barrier at equilibrium Band diagram for semiconductor heterojunction at equilibrium In solid-state physics of semiconductors , a band diagram is a diagram plotting various key electron energy levels ( Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x . [ 1 ]
The Schottky diode, also known as the Schottky-barrier diode, was theorized for years, but was first practically realized as a result of the work of Atalla and Kahng during 1960–1961. [ 23 ] [ 24 ] They published their results in 1962 and called their device the "hot electron" triode structure with semiconductor-metal emitter. [ 25 ]
This allows the diode to operate at higher signal frequencies, at the expense of a higher forward voltage drop. Gold-doped diodes are faster than other p–n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p–n diodes). [43] [44] A typical example is the 1N914.
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
In solid junctions, we can take as a reference the metal Fermi level, if the work function is known, which provides a full energy diagram in the physical scale. The Mott–Schottky plot is sensitive to the electrode surface in contact with solution, see Figure 2.
When forward-biased, a Schottky diode's voltage drop 0.25 V is much less than a standard silicon diode's 0.6 V. In a standard saturated transistor, the base-to-collector voltage is 0.6 V. In a Schottky transistor, the Schottky diode shunts current from the base into the collector before the transistor goes into saturation.