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A thin film is a layer of materials ranging from fractions of a nanometer to several micrometers in thickness. [1] The controlled synthesis of materials as thin films (a process referred to as deposition) is a fundamental step in many applications.
Microfabricated devices are typically constructed using one or more thin films (see Thin film deposition). The purpose of these thin films depends upon the type of device. Electronic devices may have thin films which are conductors (metals), insulators (dielectrics) or semiconductors.
Layer-by-layer (LbL) deposition is a thin film fabrication technique. The films are formed by depositing alternating layers of complementary materials with wash steps in between. This can be accomplished by using various techniques such as immersion, spin, spray, electromagnetism, or fluidics. [1]
EPVD technology was developed by Paradigm Shift Technologies, Inc., a Canadian company founded in 1995. It was invented to replace the traditional chrome plating. [1]Thin-film deposition is the overarching technology from which PVD, CVD, ALD, EBPVD, and EPVD are derived, each employing different methods to achieve specific coating characteristics.
thin-film deposition – a technique for depositing a thin film of material onto a substrate or onto previously deposited layers; in IC manufacturing, the layers are insulators, semiconductors, and conductors; through-silicon via (TSV) – a vertical electrical connection that pierces the (usually silicon) substrate
One advantage to spin coating thin films is the uniformity of the film thickness. Owing to self-leveling, thicknesses do not vary more than 1%. The thickness of films produced in this manner may also affect the optical properties of such materials.
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on a supporting (but non-conducting) substrate , such as glass .
This page was last edited on 10 November 2020, at 11:55 (UTC).; Text is available under the Creative Commons Attribution-ShareAlike 4.0 License; additional terms may apply.
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