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26 Random-access memory (RAM) modules. 27 Random-access memory (RAM) chips. 28 Headphones. 29 Image scanners. ... Nanya Technology; Powerchip Semiconductor (as a foundry)
Low-Power Double Data Rate (LPDDR), also known as LPDDR SDRAM, is a type of synchronous dynamic random-access memory (SDRAM) that consumes less power than other random access memory designs and is thus targeted for mobile computing devices such as laptop computers and smartphones. Older variants are also known as Mobile DDR, and abbreviated as ...
Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
Nano-RAM is a proprietary computer memory technology from the company Nantero. It is a type of nonvolatile random-access memory based on the position of carbon nanotubes deposited on a chip-like substrate. In theory, the small size of the nanotubes allows for very high density memories.
In January 2005, Rambus filed four more lawsuits against memory chip makers Hynix Semiconductor, Nanya Technology, Inotera Memories and Infineon Technology claiming that DDR2, GDDR2 and GDDR3 chips contain Rambus technology. In March 2005, Rambus had its claim for patent infringements against Infineon dismissed.
Inotera Memories, Inc. (Chinese: 華亞科技; pinyin: huā yǎ kē jì) was a company incorporated as a joint venture between Nanya Technology Corporation and Infineon (later Qimonda) in Taiwan in January 2003. The company was acquired by Micron Technology in 2016. [1]
Qimonda 512 Mbit GDDR3. Qimonda AG (/ ˌ k i ˈ m oʊ n d ə / kee-MOHN-də) was a German memory company split out of Infineon Technologies (itself a spun off business unit of Siemens AG) on 1 May 2006 to form at the time the second largest DRAM company worldwide, according to the industry research firm Gartner Dataquest.
High Bandwidth Memory (HBM) is a high-performance RAM interface for 3D-stacked SDRAM from Samsung, AMD and SK Hynix. It is designed to be used in conjunction with high-performance graphics accelerators and network devices. [39] The first HBM memory chip was produced by SK Hynix in 2013. [40]
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