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A six-transistor (6T) CMOS SRAM cell. WL: word line. BL: bit line. A typical SRAM cell is made up of six MOSFETs, and is often called a 6T SRAM cell. Each bit in the cell is stored on four transistors (M1, M2, M3, M4) that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1.
English: Circuit diagram of an SRAM cell, built with six MOSFETs. The bulk connection of all transistors is to ground, but is not shown from simplicity. The bulk connection of all transistors is to ground, but is not shown from simplicity.
The storage element of the DRAM memory cell is the capacitor labeled (4) in the diagram above. The charge stored in the capacitor degrades over time, so its value must be refreshed (read and rewritten) periodically. The nMOS transistor (3) acts as a gate to allow reading or writing when open or storing when closed. [37]
SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. [21] Commercial use of SRAM began in 1965, when IBM introduced their SP95 SRAM chip for the System/360 Model 95. [9] Toshiba introduced bipolar DRAM memory cells for its Toscal BC-1411 electronic calculator in 1965.
Integrated bipolar static random-access memory (SRAM) was invented by Robert H. Norman at Fairchild Semiconductor in 1963. [17] It was followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. [10] SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each bit of data. [18]
The sense amplifier operation in DRAM is quite similar to the SRAM, but it performs an additional function. The data in DRAM chips is stored as electric charge in tiny capacitors in the memory cells. The read operation depletes the charge in a cell, destroying the data, so after the data is read out the sense amplifier must immediately write it ...
Static random-access memory (SRAM) is electronic memory that does not require refreshing. [2] An SRAM memory cell requires four to six transistors, compared to a single transistor and a capacitor for DRAM; therefore, SRAM circuits require more area on a chip. As a result, data density is much lower in SRAM chips than in DRAM, and gives SRAM a ...
In 1966 he invented the one transistor memory cell consisting of a transistor and a capacitor for which a patent was issued in 1968. [4] It became the basis for today's dynamic random-access memory (DRAM) and almost all other memory types such as SRAM and FLASH memory.