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  2. Static random-access memory - Wikipedia

    en.wikipedia.org/wiki/Static_random-access_memory

    A six-transistor (6T) CMOS SRAM cell. WL: word line. BL: bit line. A typical SRAM cell is made up of six MOSFETs, and is often called a 6T SRAM cell. Each bit in the cell is stored on four transistors (M1, M2, M3, M4) that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1.

  3. File:SRAM Cell (6 Transistors).svg - Wikipedia

    en.wikipedia.org/wiki/File:SRAM_Cell_(6...

    The following other wikis use this file: Usage on ar.wikipedia.org خلية ذاكرة (حوسبة) Usage on ca.wikipedia.org SRAM; Lògica de transistors pas

  4. Memory cell (computing) - Wikipedia

    en.wikipedia.org/wiki/Memory_cell_(computing)

    CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24] In 1978, Hitachi introduced the twin-well CMOS process, with its HM6147 (4 kb SRAM) memory chip, manufactured with a 3 μm process. The ...

  5. 6T SRAM - Wikipedia

    en.wikipedia.org/?title=6T_SRAM&redirect=no

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  6. Zen 4 - Wikipedia

    en.wikipedia.org/wiki/Zen_4

    In addition to the reduced core footprint, die space is further saved in the Zen 4c CCD via the use of denser 6T dual-port SRAM cells and an overall reduction of L3 cache to 16 MB per 8-core CCX. Zen 4c cores have the same sized L1 and L2 caches as Zen 4 cores but the cache die area in Zen 4c cores is lower due to using denser SRAM and slower ...

  7. HuffPost Data

    projects.huffingtonpost.com

    Interactive maps, databases and real-time graphics from The Huffington Post

  8. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    The physical layout of the DRAM cells in an array is typically designed so that two adjacent DRAM cells in a column share a single bitline contact to reduce their area. DRAM cell area is given as n F 2 , where n is a number derived from the DRAM cell design, and F is the smallest feature size of a given process technology.

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