Ads
related to: npn pnp no proximity sensordiscoverpanel.com has been visited by 10K+ users in the past month
Search results
Results from the WOW.Com Content Network
Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
For an NPN open emitter output, the collector is connected to the positive voltage rail, so the emitter outputs a high voltage when the transistor is on and is hi-Z when off. For a PNP open emitter output, the collector is connected to the low voltage supply, so the emitter outputs a low voltage when the transistor is on and is hi-Z when off.
An infrared proximity sensor Optical proximity sensor in a 2016 Samsung smartphone.A proximity sensor is a standard feature of most smartphones, disabling the touchscreen when positioned near an ear during phone calls; more recent (late 2019-early 2020) smartphones with OLED displays may have the sensor mounted under the display.
Hall sensors are used for proximity sensing, positioning, speed detection, and current sensing applications [1] and are common in industrial and consumer applications. Hundreds of millions of Hall sensor integrated circuits (ICs) are sold each year [ 2 ] by about 50 manufacturers, with the global market around a billion dollars .
The 2N3904 is an NPN transistor that can only switch one-third the current of the 2N2222 but has otherwise similar characteristics. The 2N3904 exhibits its forward gain (beta) peak at a lower current than the 2N2222, and is useful in amplifier applications with reduced I c , e.g., (gain peak at 10 mA for the 2N3904 but 150 mA for the 2N2222).
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
The expressions are derived for a PNP transistor. For an NPN transistor, n has to be replaced by p, and p has to be replaced by n in all expressions below. The following assumptions are involved when deriving ideal current-voltage characteristics of the BJT [7] Low level injection; Uniform doping in each region with abrupt junctions
Ads
related to: npn pnp no proximity sensordiscoverpanel.com has been visited by 10K+ users in the past month