enow.com Web Search

  1. Ad

    related to: semiconductor strain gauge function test

Search results

  1. Results from the WOW.Com Content Network
  2. Gauge factor - Wikipedia

    en.wikipedia.org/wiki/Gauge_factor

    In constantan strain gauges (the most commercially popular), the effect accounts for 20% of the gauge factor, but in silicon gauges, the contribution of the piezoresistive term is much larger than the geometric terms. This can be seen in the general examples of strain gauges below:

  3. Strain gauge - Wikipedia

    en.wikipedia.org/wiki/Strain_gauge

    An unmounted resistive foil strain gauge. A strain gauge takes advantage of the physical property of electrical conductance and its dependence on the conductor's geometry. . When an electrical conductor is stretched within the limits of its elasticity such that it does not break or permanently deform, it will become narrower and longer, which increases its electrical resistance end-to-

  4. Piezoresistive effect - Wikipedia

    en.wikipedia.org/wiki/Piezoresistive_effect

    The piezoresistive effect of semiconductor materials can be several orders of magnitudes larger than the geometrical effect and is present in materials like germanium, polycrystalline silicon, amorphous silicon, silicon carbide, and single crystal silicon. Hence, semiconductor strain gauges with a very high coefficient of sensitivity can be built.

  5. Four-terminal sensing - Wikipedia

    en.wikipedia.org/wiki/Four-terminal_sensing

    Four-point measurement of resistance between voltage sense connections 2 and 3. Current is supplied via force connections 1 and 4. In electrical engineering, four-terminal sensing (4T sensing), 4-wire sensing, or 4-point probes method is an electrical impedance measuring technique that uses separate pairs of current-carrying and voltage-sensing electrodes to make more accurate measurements ...

  6. Strained silicon - Wikipedia

    en.wikipedia.org/wiki/Strained_silicon

    Carbon doping as low as 0.25% in the N-channel MOSFET source and drain causes uniaxial tensile strain in the channel, increasing electron mobility. Covering the NMOS transistor with a highly stressed silicon nitride layer is another way to create uniaxial tensile strain. As opposed to wafer-level methods of inducing strain on the channel layer ...

  7. Strain engineering - Wikipedia

    en.wikipedia.org/wiki/Strain_engineering

    Strain engineering refers to a general strategy employed in semiconductor manufacturing to enhance device performance. Performance benefits are achieved by modulating strain , as one example, in the transistor channel, which enhances electron mobility (or hole mobility) and thereby conductivity through the channel.

  8. Wafer testing - Wikipedia

    en.wikipedia.org/wiki/Wafer_testing

    Wafer testing is a step performed during semiconductor device fabrication after back end of line (BEOL) and before IC packaging.. Two types of testing are typically done. Very basic wafer parametric tests (WPT) are performed at a few locations on each wafer to ensure the wafer fabrication process has been carried out successfully.

  9. Design for testing - Wikipedia

    en.wikipedia.org/wiki/Design_for_testing

    The most common method for delivering test data from chip inputs to internal circuits under test (CUTs, for short), and observing their outputs, is called scan-design. In scan-design, registers ( flip-flops or latches) in the design are connected in one or more scan chains , which are used to gain access to internal nodes of the chip.

  1. Ad

    related to: semiconductor strain gauge function test