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Wear leveling (also written as wear levelling) is a technique [1] for prolonging the service life of some kinds of erasable computer storage media, such as flash memory, which is used in solid-state drives (SSDs) and USB flash drives, and phase-change memory. There are several wear leveling mechanisms that provide varying levels of longevity ...
Long-term memory has a much larger capacity than the prior two and actually stores information from both these types of memories to create a long lasting and large memory. Long-term memory is the largest target for research involving selective memory erasure. Within long-term memory there are several types of retention. [10]
Refreshing does not employ the normal memory operations (read and write cycles) used to access data, but specialized cycles called refresh cycles which are generated by separate counter circuits and interspersed between normal memory accesses. [5] [6] The storage cells on a memory chip are laid out in a rectangular array of rows and columns.
Flash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (typically 512 bytes or larger) and limited number of write cycles (often 10,000). There is no clear boundary dividing the two, but the term "EEPROM" is generally used to describe non-volatile memory with small erase blocks (as small ...
An EPROM (rarely EROM), or erasable programmable read-only memory, is a type of programmable read-only memory (PROM) chip that retains its data when its power supply is switched off. Computer memory that can retrieve stored data after a power supply has been turned off and back on is called non-volatile .
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a form of random-access memory similar in construction to DRAM, both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor, an F-RAM cell contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT. The Zr/Ti atoms in ...
Flash memory [3] is used in computers, PDAs, digital audio players, digital cameras, mobile phones, synthesizers, video games, scientific instrumentation, industrial robotics, and medical electronics. Flash memory has a fast read access time but it is not as fast as static RAM or ROM. In portable devices, it is preferred to use flash memory ...
Memory scrubbing consists of reading from each computer memory location, correcting bit errors (if any) with an error-correcting code , and writing the corrected data back to the same location. [ 1 ] Due to the high integration density of modern computer memory chips , the individual memory cell structures became small enough to be vulnerable ...
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