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Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
J 0, reverse saturation current density (ampere/cm 2) r S, specific series resistance (Ω·cm 2) r SH, specific shunt resistance (Ω·cm 2). This formulation has several advantages. One is that since cell characteristics are referenced to a common cross-sectional area they may be compared for cells of different physical dimensions.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
From the Shockley ideal diode equation given above, it might appear that the voltage has a positive temperature coefficient (at a constant current), but usually the variation of the reverse saturation current term is more significant than the variation in the thermal voltage term.
The Shockley diode (named after physicist William Shockley) is a four-layer semiconductor diode, which was one of the first semiconductor devices invented. It is a PNPN diode with alternating layers of P-type and N-type material.
In Shockley-Read-Hall recombination (SRH), also called trap-assisted recombination, the electron in transition between bands passes through a new energy state (localized state) created within the band gap by a dopant or a defect in the crystal lattice; such energy states are called traps. Non-radiative recombination occurs primarily at such sites.
where flows from the diode's anode to its cathode, is the diode's reverse saturation current and is the thermal voltage (approximately 26 mV at room temperature). When − V out ≫ V T , {\displaystyle -V_{\text{out}}\gg V_{\text{T}},} the diode's current is approximately proportional to an exponential function :