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p–n junction operation in forward bias mode showing reducing depletion width. Both p and n junctions are doped at a 10 15 /cm 3 doping level, leading to built-in potential of ~ 0.59 V. Observe the different quasi-fermi levels for conduction band and valence band in n and p regions (red curves).
p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
As recombination proceeds and more ions are created, an increasing electric field develops through the depletion zone that acts to slow and then finally stop recombination. At this point, there is a "built-in" potential across the depletion zone. A p–n junction diode in low forward bias mode.
Band diagram of PN junction operation in forward bias mode showing reducing depletion width. Both p and n junctions are doped at a 1×10 15 /cm 3 doping level, leading to built-in potential of ~0.59 V. Reducing depletion width can be inferred from the shrinking charge profile, as fewer dopants are exposed with increasing forward bias.
A homojunction PN junction.The band at the interface is continuous. In forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59 V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves).
At the junction of a semiconductor and metal, the bands of the semiconductor are pinned to the metal's Fermi level. At the junction of a conductor and vacuum, the vacuum level (from vacuum electrostatic potential) is set by the material's work function and Fermi level. This also (usually) applies for the junction of a conductor to an insulator.
The intercept to the x axis provides the built-in potential, or the flatband potential (as here the surface barrier has been flattened) and allows establishing the semiconductor conduction band level with respect to the reference of potential. In liquid junction the reference of potential is normally a standard reference electrode. In solid ...
Integrating the electric field across the depletion region determines what is called the built-in voltage (also called the junction voltage or barrier voltage or contact potential). Physically speaking, charge transfer in semiconductor devices is from (1) the charge carrier drift by the electric field and (2) the charge carrier diffusion due to ...