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p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
p–n junction operation in forward bias mode showing reducing depletion width. Both p and n junctions are doped at a 10 15 /cm 3 doping level, leading to built-in potential of ~ 0.59 V. Observe the different quasi-fermi levels for conduction band and valence band in n and p regions (red curves).
A homojunction PN junction.The band at the interface is continuous. In forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59 V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves).
Band diagram of PN junction operation in forward bias mode showing reducing depletion width. Both p and n junctions are doped at a 1×10 15 /cm 3 doping level, leading to built-in potential of ~0.59 V. Reducing depletion width can be inferred from the shrinking charge profile, as fewer dopants are exposed with increasing forward bias.
The intercept to the x axis provides the built-in potential, or the flatband potential (as here the surface barrier has been flattened) and allows establishing the semiconductor conduction band level with respect to the reference of potential. In liquid junction the reference of potential is normally a standard reference electrode. In solid ...
Integrating the electric field across the depletion region determines what is called the built-in voltage (also called the junction voltage or barrier voltage or contact potential). Physically speaking, charge transfer in semiconductor devices is from (1) the charge carrier drift by the electric field and (2) the charge carrier diffusion due to ...
The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. [1] (In contrast, a rectifying semiconductor–semiconductor junction, the most common semiconductor device today, is known as a p–n junction.)
The following image shows change in excess carriers being generated (green:electrons and purple:holes) with increasing light intensity (generation rate /cm 3) at the center of an intrinsic semiconductor bar.